导师姓名：郑学军
性别：男
人气指数：232

所属院校：湘潭大学
所属院系：机械工程学院
职称：教授
导师类型：博导
招生专业：
研究领域： 1、低维纳米材料及其敏感器件2、半导体纳米结构及微纳光机电系统3、压电材料及传感元器件4、... [展开]


研究领域： 1、低维纳米材料及其敏感器件2、半导体纳米结构及微纳光机电系统3、压电材料及传感元器件4、铁电薄膜及其存储器5、微机电工程? [收起]




通讯方式 :
办公电话：**
电子邮件：zhengxuejun@xtu.edu.cn


个人简述 :
“薄膜材料及其器件力学” 湘潭大学首个教育部创新团队带头人(2010)，“低维材料及其器件力学”湖南省高校科技创新团队带头人(2009)，教育部长江学者特聘教授(2009)，国家杰出青年基金(2008)，湖南省芙蓉学者特聘教授(2007)。全国百篇优博论文提名奖(2005)。美国匹兹堡大学访问学者(2005),湘潭大学一般力学与力学基础博士(2002), 中南大学桥隧结构工程硕士(1989),国防科大飞行器固体力学本科(1985)。1985年7月-2003年6月，中南大学铁道学院任助教、讲师、副教授。2003年6月-2014年10月，湘潭大学教授、博士生导师，2006年10月-2014年10月，任湘潭大学材料与光电物理学院副院长。2003年6月-2011年10月，任湘潭大学“低维材料及其应用技术教育部重点实验室 ”副主任。2014年10月至今，任湘潭大学机械工程学院学院院长。?

科研工作 :
已主持完成的科研项目：
1、上海市科委纳米专项(11nm**) , 2011-2014年。2、低维铁电材料的制备、力学表征及其微器件应用，国家自然科学基金项目杰出青年基金(**), 2008-2012年。3、钛酸铋钠基弛豫型无铅压电薄膜及相关性能，国家自然科学基金项目(**), 2009-2011年。4、自组装半导体压电纳米带及相关性能，国家自然科学基金项目(**), 2007-2009年。5、ZnO, ZnS压电纳米带及物理力学性能,国家教育部和湖南省教育厅重点项目,2007-2009年。6、自组装半导体压电纳米带及相关力学性能,国家自然科学基金(**), 2007-2009年。7、无铅铁电薄膜及其纳米薄膜微器件，湖南省科技计划重点项目，2005-2007年。8、铋层状钙钛矿铁电薄膜的制备及其热冲击下断裂失效行为(**),国家自然科学基金项目,2005-2007年。9、压电薄膜材料的制备及相关物理力学性能,湖南省教育厅青年骨干教师基金项目,2003-2005年。10、压电薄膜材料的制备及相关物理力学性能,湖南省教育厅青年项目,2003-2005年。
在研主持科研项目:
1、GaN半导体纳米材料的多场耦合失效机理(编号：**), 2013-2016年。2、薄膜材料及其器件力学 教育部“长江学者计划”奖励计划 教育部创新团队滚动资助项目(IRT_14R48)3、薄膜材料及器件力学，教育部“长江学者计划”特聘教授项目([2009]17)
发明专利
1、基于单个极性半导体纳米带光弹簧的制作方法 郑学军、陈义强、王甲世、姜传斌、龚伦军 国家发明专利, ZL **.2, 20112、一种测量纳米材料光致硬化性能的方法 郑学军、王甲世、陈义强、杨博、龚伦军 国家发明专利, ZL **.7, 20113、一种实时测量纳米材料光致伸缩性能的方法 郑学军、陈义强、王甲世、龚伦军、余功成 国家发明专利, ZL **.3, 20124、一种测量压电材料压电系数d15的准静态方法 郑学军、彭金峰、刘勋、张勇、孙静 国家发明专利, ZL **.7, 20155、一种氧化锌纳米线生长所用的催化剂及其应用，王现英、谢澍梵、郑学军 中国专利号：ZL **9.0,20146、氧化物稀磁半导体/铁电体异质结构及其制备方法 王金斌、何春、钟向丽、周益春、郑学军 国家发明专利, ZL **, 2010
成果获奖
1、薄膜材料及其器件力学 教育部“长江学者计划”奖励计划 教育部创新团队滚动资助项目2014 (排名第一)2、微纳材料及器件的力学理论设计与性能表征方法，湖南省自然科学二等奖2013 (排名第一)3、无铅铁电薄膜及其器件的失效与性能调制，湖南省自然科学一等奖2012 (排名第二)4、指导硕士研究生王甲世获湖南省优秀硕士学位论文(2012)5、指导硕士研究生郑辉获“湘潭大学第十六届研究生校长优秀奖”(2011)6、薄膜材料及其器件力学 教育部“长江学者计划”奖励计划 教育部创新团队2010 (排名第一)7、低维材料及其器件力学 湖南省高校创新团队2010 (排名第一)8、薄膜材料及器件力学，教育部“长江学者计划”特聘教授项目20099、低维无机非金属材料及微器件，湖南省“芙蓉学者计划”特聘教授项目2007 10、掺铕含量对Bi4-xEuxTi3 O12铁电薄膜微结构和铁电性能的影响，湖南省自然科学优秀学术论文一等奖 2008(排名第一)11、压电薄膜的断裂韧性及激光作用下的破坏机制，全国100篇优秀博士学位论文提名奖200512、湖南省优秀博士毕业论文 湖南省人民政府学位委员会湖南省教育厅 200513、纳米压痕实验测量Pb(Zr0.52Ti0.48)03铁电薄膜的界面强度，湖南省自然科学优秀学术论文一等奖2004(排名第一)14、湘潭市2001-2003年度自然科学优秀学术论文一等奖 湘潭市科学技术协会 湘潭市人事局 2004(排名第一)15、材料力学计算机辅助教学的研究与实践 湖南省优秀教学成果二等奖 1997.7（排名第三）18、L. L Wang, X. J. Luo, X. J. Zheng*, R. Wang and T. Zhang. Direct annealing of electrospun synthesized high-performance porous SnO2 hollow nanofibers for gas sensors, RSC Adv. 3 (2013), 9723-9728 (SCI源刊,影响因子2.562)19、Yanchao She, Xuejun Zheng, Denglong Wang, and Weixi Zhang. 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Dong, S.H. Deng, S.T. Peng. Investigation of a d15 mode PZT-51 piezoelectric energy harvester with a series connection structure. Smart Mater. Struct. 21 (2012), 105-109. (SCI源刊，影响因子2.089).28、Y. Q. Gong, H. Dong, X. J. Zheng, J. F. Peng, X. J. Li, R. J. Huang. Large piezoelectric response of Bi0.5(Na(1?x)Kx)0.5TiO3 thin films near morphotropic phase boundary identified by multi-peak fitting. J. Phys. D: Appl. Phys. 45 (2012), 301-305. (SCI源刊,影响因子2.544)29、L. Zhou, J. Sun, X. J. Zheng, S. F. Deng, J. H. Zhao, S. T. Peng. Y. Zhang, X. Y. Wang and H. B. Cheng. A model for the energy harvesting performance of shear mode piezoelectric cantilever, Sensors and Actuators A. 179 (2012), 185-192. (SCI源刊,影响因子1.802)30、J. Sun, X. J. Zheng, W. Li, A model for the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor. Current Applied Physics, 12(2012), 760-764.31、Y. Zhang, X.J. Zheng, X. L. Zhong, S. F. Deng. The ethanol sensing characteristics of ZnO thin films with low operating temperatures synthesized by pulsed laser deposition. Meas. Sci. Technol. 23(2011),105-107.32、X. J. Zheng, X. C. Cao, J. Sun, B. Yuan, Q. H. Li, Z. Zhu, Y. Zhang, A vacuum pressure sensor based on ZnO nanobelt film, Nanotechnology, 22(2011), 495-501 (1-6).33、Y. Zhang, X. J. Zheng, T. Zhang, Characterization and humidity sensing properties of Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 powder synthesized by metal-organic decomposition, Sensors and Actuators B: Chemical, 156(2011), 887-892.34、J. Sun, X. J. Zheng, J. Cao, W. Li, Interface effects on the characteristics of metal-ferroelectric-insulator-semiconductor ?eld-effect transistor, Semicond. Sci. Technol., 26(2011), 093-097 (1-6).35、J. Sun, X. J. Zheng, Modeling of MFIS-FETs for the application of ferroelectric random access memory. IEEE Transactions on Electron Devices, 58(2011) 55-59.36、Z. Zhu, X. J. Zheng, D. D. Jiang, Z. C. Yang, The threshold electric field of 180° domain switching in the misfit strain-external electric field phase diagram. J. Appl. Phys, 110(2011), 032-035.37、H. Dong, X. J. Zheng, W. Li, Y. Q. Gong, J. F. Peng, Z. Zhu, The dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film. J. Appl. Phys., 110(2011), 119-124.38、H. Zheng, X. J. Zheng, S. T. Song, J. Sun, F. Jiao, W. Liu, G. Y. Wang, Evaluation of the elastic modulus of thin film considering the substrate effect and geometry effect of indenter tip. Computational Materials Science, 50(2011), 26-30.39、Y. Zhang, X. J. Zheng, T. Zhang, J. Sun, Y. Bian, J. Song, Gas sensing properties of coral-like Bi0.5K0.5TiO3 powders synthesized by metal-organic decomposition. Meas. Sci. Technol. 22(2011), 195-205.40、J. Sun, X. J. Zheng, W. Yin, M. H. Tang, W. Li, Influences of space charge and electrode on the electrical transport through (Ba,Sr)TiO3 thin film capacitors. Applied Surface Science, 257(2011), 4990-4993.41、B. 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Li, Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity. Appl. Phys. Lett., 97.24 (2010): 242905 (SCI源刊，影响因子3.726)46、H. Zheng, X. J. Zheng, J. S. Wang, G. C. Yu, Y. Li, S. T. Song, C. Han, Evaluation the effect of aspect ratio for Young’s modulus of nanobelt using finite element method. Materials and design, 32.3 (2011): 1407-1413 (SCI源刊，影响因子1.518)47、B. Yuan,X. J. Zheng, Y. Q. Chen, B. Yang, T. Zhang, High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt. Solid-State Electronics, 55, (2011), 49-53. (SCI源刊，影响因子1.422)48、Y. Q. Chen, X. J. Zheng, W. Li, Modeling of flexoelectric effect on capacitor-voltage and memory window of metal-ferroelectric-insulator-silicon capacitor. Appl. Phys. Lett., 96, (2010), 233501 (1-3) (SCI源刊，影响因子3.726)49、X. J. Zheng, G. C Yu, Y. Q. Chen, S. X. Mao, T. Zhang, Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation. J. Appl. Phys., 108, (2010), 094305. (SCI源刊,影响因子2.497)50、X. J. Zheng, Q. Y. Wu, J. F. Peng, L. He, X. Feng, Y. Q. Chen, D. Z. Zhang, Annealing temperature dependence of effective piezoelectric coefficients for Bi3.15Eu0.85Ti3O12 thin films. J. Mater. Sci., 45, (2010), 3001-3006. (SCI源刊,影响因子1.181)51、X. J. Zheng, J. F. Peng, Y. Q. Chen, L. He, X. Feng, D. Z. Zhang, L. J. Gong, Q. Y. Wu, Enhancement on effective piezoelectric coefficient of Bi3.25Eu0.75Ti3O12 ferroelectric thin films under moderate annealing temperature. Thin Solid Films, 519,(2010), 714-718. (SCI源刊,影响因子1.884)52、D. Z. Zhang, X. J. Zheng, X. Feng, T. Zhang, J. Sun, S. H. Dai, L .J. Gong, Y. Q. Gong, L. He, Z. Zhu, J. Huang, X. Xu, Ferro-piezoelectric properties of 0.94(Na0.5Bi0.5)TiO3–0.06BaTiO3 thin film prepared by metal–organic decomposition. Journal of Alloys and Compounds, 504,(2010), 129-133. (SCI源刊，影响因子2.135)53、J. 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Song, Evaluation of the substrate effect on indentation behavior of film/substrate system. Applied Surface Science, 256,(2010), 3316-3320 (SCI源刊,影响因子1.576)63、Z. Zhu, X. J. Zheng, W. Li, Multilayer growth of BaTiO3 thin films via pulsed laser deposition: An energy-dependent kinetic Monte Carlo simulation. Applied Surface Science, 256,(2010), 5876-5881 (SCI源刊,影响因子1.576)64、X. J. Zheng, S. H. Dai, X. Feng, T. Zhang, D. Z. Zhang, Y. Q. Gong, Y. Q. Chen, L. He, Structural and electrical properties of (Na0.85K0.15)0.5Bi0.5TiO3 thin films deposited on LaNiO3 and Pt bottom electrodes. Applied Surface Science, 256,(2010), 3316-3320 (SCI源刊,影响因子1.576)65、Y. Q. Chen, X. J. Zheng, L. He, X. Feng, Annealing temperature-dependent piezoelectric properties of Bi3.15Nd0.85Ti3O12 ferroelectric thin films. Phys. Status Solidi A, 207,(2010), 1240-1244 (SCI源刊，影响因子1.205)66、Y. Q. Gong, X. J. Zheng, L. J. Gong, Y. Ma, D. Z. Zhang, S. H. Dai, X. J. 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